TCKE1401NM 80 V-Rated eFuse IC
Publish Date: 2026-08-31
The Toshiba Electronic Devices and Storage TCKE1401NM 80 V-rated eFuse IC is designed to protect 24 V, 48 V, and 54 V power lines in industrial and consumer equipment.
TDS5B212MX/TDS5C212MX Mux/Demux Switches
Publish Date: 2026-07-29
Toshiba Electronic Devices and Storage TDS5B212MX and TDS5C212MX high-speed 2:1 multiplexer and 1:2 demultiplexer switches support data rates up to 64 GT/s and bandwidths up to 34 GHz.
Driving High-Voltage MOSFETs in Automotive Solid-State Relays Without a Second Power Supply
Toshiba's TLX9920 photovoltaic-output photocoupler provides isolated gate drivers for high-voltage MOSFET-based SSRs without a separate power supply.
TCKE6 Series eFuse Protection ICs
Publish Date: 2026-05-29
Toshiba Electronic Devices and Storage TCKE6 series eFuse repeatable protection ICs have a wide variety of built-in functions required for power line circuit protection.
Explore Toshiba’s automotive-grade semiconductor solutions including MOSFETs, diodes, isolation devices, and motor driver ICs. Designed for reliability and AEC-Q100 compliance across EV, BMS, and power applications.
The Toshiba TLX9920 automotive photovoltaic output photocoupler is suitable for gate driving of high-voltage power MOSFETs used in solid-state relays.
The Toshiba 1.6 kW LLC resonant AC/DC converter was developed for a variety of semiconductors to support applications like AC-DC converters for 48 V servers.
Toshiba SiC MOSFETs and low-voltage MOSFETs are designed to handle the challenges presented by modern server designs such as increased space density.
Toshiba's Next-Gen Trench-Gate MOSFETs Increase Efficiency and Power Density
Toshiba's next-generation, trench-gate MOSFET enhances design options for efficient, reliable power management in advanced applications.
Use an Advanced MOSFET Process for Greater Power Density and Reliability
Publish Date: 2025-12-16
Learn how advanced MOSFETs built around an improved low-power trench structure can improve efficiency and reliability.
Toshiba automotive ESD protection diodes absorb static electricity, prevent circuit malfunctions, and safeguard devices across various voltage ranges.
Toshiba offers a comprehensive range of automotive-grade pre-biased bipolar transistors and standard transistors.
Toshiba automotive-grade motor driver ICs are suited for solutions such as quiet motor operation due to their use of sine wave current.
The Toshiba TCR3LM, TCR3DM, and TCR3EM series general-purposes LDOs offer a range of performance options for a wide variety of mobile applications.
Toshiba automotive-grade intelligent power devices feature a built-in charge pump and can be directly driven from a microprocessor.
The Toshiba UMOS11 low-voltage MOSFETs are designed for DC/DC converters and motor drives, server power supplies, and other switching power supply applications.
Toshiba 600 V/650 V DTMOS-VI MOSFETs use a powerful super junction process with a robust body diode to improve efficiency in critical switching applications.
Toshiba's 650 V and 1,200 V SiC technology is ideal for high-efficiency power supply applications.
Toshiba TLP5814H gate driver optocouplers are are suitable for driving SiC MOSFET and IGBT and provide high isolation protection.
Toshiba 400 V brushless AC motor inverter solution uses state of the art SiC MOSFETs to provide higher efficiencies over IGBT devices at high voltages.

