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Infineon Memory Solutions - Trusted supplier for specialty memories since 1982
The world’s most trusted specialty memory portfolio—built for leadership, longevity, and resilience.
With #1 positions across NOR Flash, F‑RAM, SRAM, and nvSRAM, and more than 40 years of leadership, Infineon enables reliable, high‑performance embedded systems across automotive, industrial, and compute applications. Backed by globally diversified manufacturing, long‑term supply commitments of 10+ years, and deep ecosystem partnerships, Infineon provides advanced, resilient memory solutions designed for mission‑critical and long‑lifecycle systems—today and for the future.
- Memory Solutions
- NOR FLASH
- F-RAM
- nvSRAM
- SRAM
- pSRAM
NOR Flash
Delivering safe, secured, and reliable solutions for embedded systems.
EXCELON™ F-RAM
Highly reliable and low-power data logging memory with virtually unlimited endurance.
SRAM
Industry's broadest portfolio of low-power and high-speed SRAM with densities ranging from 256 Kb to 144 Mb with stable supply and long-term support.
Memory Solutions Hub
Unlock a complete ecosystem of software drivers, SDKs, and support—designed for every development environment.
Memory Chipset Partners
Accelerate your design and time‑to‑market—choose memory tested and qualified with your preferred chipset partner.
Public Trainings
Deepen your Memory Solutions expertise with expert‑led training from the Infineon Academy.
Memory Longevity Program
Secure your next design with Infineon Memories—explore our long-term product availability commitments and design with confidence for the future.
NOR Flash
Infineon's NOR flash products are meticulously architected and designed to ensure the highest levels of safety, reliability, and security. The longevity program offers assurance of long-term supply continuity, complemented by a zero-defects policy for exceptional quality. A comprehensive suite of design tools and support resources is available to streamline the design process and accelerate time-to-market. With a broad portfolio tailored for industrial, automotive, communications, and datacenter applications, Infineon's NOR flash memory provides a competitive edge for reliable performance under all conditions.
SEMPER™, Infineon’s next-generation NOR Flash family is architected and designed for functional safety, ensuring that every system boots to a known state and operates reliably, every time. When trust and integrity matter, SEMPER™ Secure devices add a hardware root-of-trust and cryptographic engine to enable authenticated access, remote identity verification, and secured OTA updates with cloud-to-chip security. For wearables and other tiny battery-powered devices, SEMPER™ Nano delivers the smallest form factor and lowest power consumption to maximize battery life.
For a complete list of available NOR Flash products, Click Here
For a complete list of Infineon Flash Memory Solutions for Xilinx® FPGAs, Click Here
Key features
- Non-volatile storage from 64 Mb up to 4 Gb
- High-performance serial and parallel interfaces
- Integrated functional safety features with ASIL-D compliance
- Up to 2.56 million program/erase cycles endurance
- 25 years of data retention
- Operating temperature support up to +125 °C
- On-chip hardware error correction code (ECC)
- eXecute-in-Place (XiP)
Benefits
- Enables instant boot with read throughputs up to 400 MB/s and XiP
- Reliably stores data for up to 25 years even in harsh operating conditions
- Pairs with popular SoCs from broad ecosystem of chipset partners
- Ensures safe and reliable operation with SafeBoot and error checking
- Accelerates time to market with SEMPER™ Solutions Hub SDK
- Assures product supply and longevity of more than 10 years
| Product family | Density | Interface | Voltage | Speeds | Target applications |
|---|---|---|---|---|---|
| SEMPER™ NOR Flash | 256 Mb - 4 Gb |
QSPI, octal xSPI, HYPERBUS™ | 1.8 V, 3.0 V |
Up to 400 MB/s | Robotics, industrial automation and drives, automotive ADAS Safety-critical operation, high speed, fast boot |
| SEMPER™ Secure NOR Flash | 128 Mb - 256 Mb |
1.8 V, 3.0 V |
Up to 400 MB/s | Networking, surveillance, smart factories, data centers Secured boot and storage, secured end-to-end transitions | |
| SEMPER™ Nano | 256 Mb | QSPI | 1.8 V | Up to 52 MB/s | Hearables, wearables, smart sensors, portable medical Compact, reliable, low power, built-in ECC |
| HYPERFLASH™ | 128 Mb - 512 Mb |
HYPERBUS™ | 1.8 V, 3.0 V |
Up to 333 MB/s | Industrial HMI, digital displays, automotive instrument clusters Instant-on, image and graphics storage |
| Standard serial NOR Flash | 64 Mb - 1 Gb |
QSPI, dual QSPI | 1.8 V, 3.0 V |
Up to 204 MB/s | Industrial, compute, communications and automotive Reliable boot code and data storage |
| Standard parallel NOR Flash | 64 Mb - 2 Gb |
16/8-bit page mode | 3.0 V | Down to 70 ns / 15 ns | Industrial, medical, aerospace and defense Reliable boot code and data storage |
F-RAM
F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that enables designers to instantly capture and preserve critical data when power is interrupted. They are ideal for mission-critical applications requiring continuous and low-power data-logging. Available in compact form factors, F-RAMs offer zero delay writes, virtually unlimited endurance, and complete tolerance to magnetic interference without compromising on reliability, performance and energy efficiency.
Infineon’s next-generation EXCELON™ F-RAM family combines the industry’s lowest quiescent currents with high-speed, low pin-count interfaces, instant non-volatility, and unlimited read/write cycle endurance, ensuring high system reliability and ultra-low-energy consumption.
For a complete list of available F-RAM products, Click Here
Key features
- Non-volatile storage from 4 Kb up to 16 Mb
- High-performance serial and parallel interfaces
- No delay write, which writes data to memory cells at bus speeds
- Read/write endurance of over 1014 (100 trillion) cycles
- Over 10 years of data retention at +85 °C
- Operating temperature support up to +125 °C
- Immune to magnetic field interference and radiation
Benefits
- Captures system data instantly on power loss
- Logs data continuously throughout system lifetime
- Operates reliably in harsh industrial & automotive environments
- Consumes 200x less energy than EEPROMs & 3,000x less than NOR Flash
- Simplifies system design without wear-leveling firmware overheads
- Assures product supply and longevity of more than 10 years
| Product family | Density | Interface | Voltage | Speeds | Target applications |
|---|---|---|---|---|---|
| EXCELON™ Ultra F-RAM | 2 Mb – 16 Mb |
QSPI | 1.8 V, 3.0 V |
Up to 108 MHz | Industrial automation and drives, enterprise servers and RAID storage, robotics |
| EXCELON™ Auto F-RAM | 1 Mb – 16 Mb |
SPI, QSPI | 1.8 V, 3.0 V |
Up to 108 MHz | Automotive EDR, forward-looking camera, ADAS, infotainment, battery management systems |
| EXCELON™ LP F-RAM | 2 Mb – 16 Mb |
SPI | 1.8 V, 3.3 V |
Up to 50 MHz | Smart metering, smart healthcare, wearables, IoT sensors, solar inverters, MFP |
| Standard F-RAM | 4 Kb – 4 Mb |
I²C, SPI, parallel (x8, x16) |
3.3 V, 5.0 V |
Up to 40 MHz, down to 60 ns | Industrial automation and drives, smart metering, automotive, solar inverters, energy storage |
nvSRAM
nvSRAM (non-volatile SRAM) is a standalone non-volatile memory that instantly captures and preserves a copy of the system data into non-volatile memory when power is interrupted and allows the data to be recalled on resumption. Infineon’s nvSRAM combines industry-leading SRAM technology with best-in-class SONOS non-volatile memory technology to offer a comprehensive portfolio of reliable, high-performance data-logging memories that eliminate the need for back-up batteries or larger supercapacitors in systems.
For a complete list of available nvSRAM products, Click Here
Key features
- Non-volatile storage from 64 Kb up to 16 Mb
- High-performance serial and parallel interfaces
- Parallel interface solution with fastest access times of 20 ns
- Infinite read/write endurance in the SRAM array
- Over 20 years of data retention at +85 °C
- Optional real-time clock (RTC)
- Immune to magnetic field interference and radiation
Benefits
- Captures system data instantly on power loss
- Logs data continuously throughout system lifetime
- Operates reliably in harsh industrial & automotive environments
- Eliminates the need for batteries or large supercapacitors
- Simplifies system design without wear-leveling firmware overheads
- Assures product supply and longevity of more than 10 years
| Product family | Density | Interface | Voltage | Speeds | Target applications |
|---|---|---|---|---|---|
| Parallel nvSRAM | 256 Kb – 16 Mb |
Parallel (x8, x16, x32) |
3.0 V, dual 3.0 V & 1.8 V I/O | Down to 20 ns | Industrial automation and drives, networking, casino gaming machines |
| Serial nvSRAM | 64 Kb – 1 Mb |
I²C, SPI, QSPI | 3.0 V, 5.0 V, dual 3.0 V & 1.8 V I/O | Up to 104 MHz | Networking, surveillance, smart factories, data centers Secured boot and storage, secured end-to-end transitions |
SRAM
SRAM (Static RAM) is a standalone random-access memory that offers designers an easy way to add more RAM to their applications. Unlike DRAM, SRAMs do not need to be periodically refreshed, making them faster, energy-efficient and more reliable for buffer and cache memory applications. Infineon offers the industry’s broadest portfolio of asynchronous and synchronous SRAMs, along with a commitment to stable product supply and long-term support.
Infineon’s latest generation of 65-nm SRAMs with on-chip hardware ECC (error correction code) provide a significant improvement in soft error rate (SER) performance, resulting in ≤ 0.1 FIT/Mb.
For a complete list of available SRAM products, Click Here
Key features
- Broadest portfolio of asynchronous and synchronous SRAMs
- High-performance asynchronous bus with access times of 10 ns
- Speeds up to 1,066 MHz using QDR™-IV synchronous SRAMs
- Ultra-low-power standby currents (6.5 µA max. for 8 Mb)
- On-chip hardware ECC
- Compatibility with legacy SRAM products
Benefits
- Maximizes battery life for battery-backed data capture use cases
- Increases memory bandwidth for real-time data access
- Achieves Random Transaction Rate up to 2,132 MT/s (QDR™-IV)
- Ensures data reliability with SER performance to ≤ 0.1 FIT/Mb
- Assures product supply and longevity of more than 10 years
| Product family | Density | Interface | Voltage | Speeds | Target applications |
|---|---|---|---|---|---|
| MoBL™ Async SRAM | 256 Kb – 64 Mb |
Parallel (x8, x16, x32) |
1.8 V, 3.0 V, 5.0 V | Down to 45 ns | Industrial automation and drives, networking, casino gaming machines, insulin pumps |
| Fast Async SRAM | 256 Kb – 32 Mb |
Parallel (x8, x16, x32) |
1.8 V, 3.0 V, 5.0 V | Down to 10 ns | Industrial automation, networking, enterprise server, aerospace and defense |
| Sync SRAM | 4 Mb – 144 Mb |
Parallel (x18, x36, x72) |
1.3 V, 1.8 V, 2.5 V, 3.3 V | Up to 2,132 MT/s | Networking, image processing, medical instrumentation, enterprise server, aerospace and defense |
pSRAM
Infineon offers a comprehensive portfolio of HYPERRAM™/Octal xSPI pseudostatic RAM (pSRAM) memories with densities ranging from 64 Mb to 512 Mb. With its unique blend of high bandwidth and low pin-count interfaces, HYPERRAM™ is ideal for a wide range of industrial and automotive applications that require additional RAM for buffering data, audio, images, video, or as a scratchpad for math and data-intensive operations. These energy-efficient pSRAMs are also the ideal expansion memory choice for battery-operated consumer and wearable devices.
Infineon’s HYPERRAM™ operates on a low signal count DDR interface called that HYPERBUS™ that achieves high-speed read and write throughput per processor pin, compared to competing technologies like SDR DRAMs.
For a complete list of available pSRAM products, Click Here
Key features
- Scalable density options from 64 Mb to 512 Mb
- Low pin-count HYPERBUS™ or octal xSPI bus
- Compact form-factor of 6 mm x 8 mm
- Operating frequency up to 200 MHz DDR
- Energy-efficient hybrid sleep mode
- Operating temperature support up to +125 °C
Benefits
- Achieves data throughput up to 800 MB/s for high-speed buffering
- Consumes fewer processor pins than competing expansion RAM
- Saves board space with compact 48 mm2 form factor
- Pairs with HYPERBUS™ based SoCs from broad ecosystem of chipset partners
- Assures product supply and longevity of more than 10 years
| Product family | Density | Interface | Voltage | Speeds | Target applications |
|---|---|---|---|---|---|
| HYPERRAM™ 2.0 | 64 Mb - 512 Gb | HYPERBUS™ Octal xSPI |
1.8 V, 3.0 V | Up to 400 MB/s | Wearables, IoT devices, HMI displays, industrial machine vision, automotive instrument cluster |
| HYPERRAM™ 3.0 | 256 Mb | HYPERBUS™ x16 ext. I/O |
1.8 V | Up to 800 MB/s | Industrial machine vision cameras, IoT devices, automotive V2X |
