N-Channel 1200 V 80A (Tc) 329W (Tc) Through Hole PG-TO247-4-17
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N-Channel 1200 V 80A (Tc) 329W (Tc) Through Hole PG-TO247-4-17
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R022M2HXKSA1

DigiKey Part Number
448-IMZC120R022M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R022M2HXKSA1
Description
SICFET N-CH 1200V 80A TO247
Manufacturer Standard Lead Time
60 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 80A (Tc) 329W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R022M2HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
22mOhm @ 32A, 18V
Mfr
Vgs(th) (Max) @ Id
5.1V @ 10.1mA
Series
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 18 V
Packaging
Tube
Vgs (Max)
+23V, -7V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 800 V
FET Type
Power Dissipation (Max)
329W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 342
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All prices are in USD
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QuantityUnit PriceExt Price
1$17.24000$17.24
30$10.62900$318.87
60$9.84250$590.55
120$9.18142$1,101.77
510$8.56088$4,366.05
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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