N-Channel 1200 V 69A (Tc) 289W (Tc) Through Hole PG-TO247-4-17
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N-Channel 1200 V 69A (Tc) 289W (Tc) Through Hole PG-TO247-4-17
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R026M2HXKSA1

DigiKey Part Number
448-IMZC120R026M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R026M2HXKSA1
Description
SICFET N-CH 1200V 69A TO247
Customer Reference
Detailed Description
N-Channel 1200 V 69A (Tc) 289W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R026M2HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
25mOhm @ 27A, 18V
Mfr
Vgs(th) (Max) @ Id
5.1V @ 8.6mA
Series
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 18 V
Packaging
Tube
Vgs (Max)
+23V, -7V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1990 pF @ 800 V
FET Type
Power Dissipation (Max)
289W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 298
Due to temporary constrained supply, DigiKey is unable to accept backorders at this time.
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$15.84000$15.84
30$9.64467$289.34
60$8.90717$534.43
120$8.28725$994.47
510$7.54296$3,846.91
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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