N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-220AB
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SIHP23N60E-GE3

DigiKey Part Number
SIHP23N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP23N60E-GE3
Description
MOSFET N-CH 600V 23A TO220AB
Manufacturer Standard Lead Time
48 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP23N60E-GE3 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2418 pF @ 100 V
FET Type
Power Dissipation (Max)
227W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHP23N60E-BE3Vishay Siliconix382742-SIHP23N60E-BE3-ND$4.78000Direct
TK20E60W,S1VXToshiba Semiconductor and Storage58264-TK20E60W,S1VX-ND$5.00000Similar
IPP60R180C7XKSA1Infineon Technologies517IPP60R180C7XKSA1-ND$3.90000Similar
In-Stock: 200
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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$4.78000$4.78
10$3.14600$31.46
50$2.44420$122.21
100$2.21820$221.82
500$1.82226$911.13
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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