Infineon CoolGaN™ Power Semiconductors for Low-Power SMPS PIO | DigiKey

Infineon's CoolGaN™ power semiconductor solutions include 600 to 700 V GaN transistors and integrated half-bridge configurations. Ultra-fast switching, no reverse-recovery charge, and low RDS(ON), make them ideal for high-efficiency low-power SMPS. Infineon's CoolGaN™ power semiconductors are designed for high-efficiency switched-mode power supply applications including adapters, chargers, LED lighting, USB-C power delivery, and low-power motor drives. The family includes CoolGaN™ Transistors at 650 V and 700 V, CoolGaN™ Transistor Dual 650 V G5 (half-bridge in a 6 mm × 8 mm QFN-32), and CoolGaN™ Drive HB 600 V G5 (half-bridge with integrated gate driver and bootstrap diode in a TFLGA-27). All feature ultra-fast switching, no reverse-recovery charge, capable reverse conduction, low gate charge, low dynamic RDS(ON), and JEDEC qualification (JESD47 and JESD22). Available in ThinPAK, DFN, TOLL, and DPAK packages for slim, high-power-density designs. They operate from −40 to +150°C.