UMOS 11 Low Voltage MOSFETs from Toshiba PIO | DigiKey

Toshiba's UMOS 11 low voltage N-channel MOSFETs deliver lower RDS(ON), reduced QOSS and QRR, and improved switching efficiency for DC/DC converters, motor drives, and power supplies. The Toshiba UMOS 11 is a next-gen semiconductor process for low-voltage MOSFETs with an improved trench structure. It targets engineers who need higher power efficiency, more compact designs, and reliable switching performance. UMOS 11 delivers lower RDS(ON), reduced QOSS, and reduced QRR compared to earlier generations. The lineup spans 40 V to 100 V in 5 mm x 6 mm and 3 mm x 3 mm packages. A built-in high-speed diode reduces reverse-recovery loss, and a tight threshold voltage supports reliable switching. These devices operate at temperatures up to 175°C. Typical uses include DC/DC converters, switching power supplies for data center servers and communications equipment, motor controls, and load switching.