Single FETs, MOSFETs

Results: 9
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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFUSCD20120B
SICFET N-CH 1700V 750OHM TO247-3
Littelfuse Inc.
180
In Stock
1 : $9.23000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.2A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
13 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO170TO750_TO-263-7L_1
SICFET N-CH 1700V 6.4A TO263-7L
Littelfuse Inc.
749
In Stock
1 : $10.87000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.4A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
11 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LFUSCD20120B
SICFET N-CH 1200V 20A TO247-3
Littelfuse Inc.
20
In Stock
2,161
Alternate Stock
1 : $12.49000
Tube
1 : $11.10000
Tube
Tariff may apply if shipping to the United States
-
Tube
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
50 nC @ 20 V
+22V, -6V
890 pF @ 800 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
SICFET N-CH 1700V 5A TO247-3L
Littelfuse Inc.
0
In Stock
450 : $3.54751
Tube
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
15V, 20V
1Ohm @ 2A, 20V
4V @ 1mA
15 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO120G0160
MOSFET SIC 1200V 27A TO247-4L
Littelfuse Inc.
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
63 nC @ 20 V
+22V, -6V
1130 pF @ 800 V
-
156W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
MOSFET SIC 1200V 100A TO247-4L
Littelfuse Inc.
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
32mOhm @ 50A, 20V
4V @ 30mA
265 nC @ 20 V
+22V, -6V
4950 pF @ 800 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
MOSFET SIC 1200V 39A TO247-4L
Littelfuse Inc.
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
92 nC @ 20 V
+22V, -6V
1700 pF @ 800 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
MOSFET SIC 1200V 22A TO247-4L
Littelfuse Inc.
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
50 nC @ 20 V
+22V, -6V
890 pF @ 800 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LFUSCD20120B
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
92 nC @ 20 V
+22V, -6V
1700 pF @ 800 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
Showing
of 9

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.